參數(shù)資料
型號(hào): 2SD1468STPS
元件分類(lèi): 小信號(hào)晶體管
英文描述: 1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: SPT, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 70K
代理商: 2SD1468STPS
2SD1834
Transistors
Rev.A
2/3
Electrical characteristics curves
Fig.1 Ground emitter output characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (mV)
200
400
600
800
1000
0
10
20
30
40
50
IB
=0A
20
A
40
A
60
A
80
A
100
A
120
A
140
A
Ta
=25
°C
Fig.2 Ground emitter propagation
characteristics
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE (V)
0.2
0.4
0.6
0.8
1.0
0
1
20
10
5
2
50
100
200
500
1000
VCE
=10V
Ta
=25
°C
Fig.3 DC current gain vs. collector current
12
5
10
20
50
100 200
500 1000
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (mA)
10
20
50
100
200
500
1000
2000
10000
5000
VCE
=1V
VCE
=3V
Ta
=25
°C
Fig.4 Collector-emitter saturation voltage
vs. collector current
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
COLLECTOR CURRENT : IC (mA)
1
2
5
10
20
50
100
200
500
1000
2000
5000
10000
2
5
10 20
50 100 200
500 1000
10000
IC
/IB
=50/1
20/1
10/1
Ta
=25
°C
Fig.5 Collector-emitter saturation voltage
vs. base current
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(saT)
(mV)
BASE CURRENT : IB(mA)
0.01
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
1000
0.02 0.05 0.1 0.2
0.5
1
2
5
10
20
50
100
IC
=100mA
IC
=50mA
IC
=10mA
IC
=5mA
Ta
=25
°C
Fig.6 Gain bandwidth product
vs. emitter current
TRANSITION
FREQUENCY
:
f
T
(MHz)
EMITTER CURRENT : IE (mA)
0.2 0.5 1 2
5 10 20 50 100 200 500 1000
1
2
5
10
20
50
100
200
500
1000
Ta
=25
°C
VCE
=5V
0.1 0.2
0.5
1
2
5
10
20
50
100
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob(pF)
COLLECTOR TO BASE VOLTAGE : VCB (V)
1
2
5
10
20
50
100
200
1000
500
Fig.7 Collector output capacitance
vs. collector-base voltage
Ta
=25
°C
f
=1MHz
IE
=0A
0.1 0.2
0.5
1
2
5
10
20
50
100
EMITTER
INPUT
CAPACITANCE
:
Cib(pF)
EMITTER TO BASE VOLTAGE : VEB (V)
1
2
5
10
20
50
100
Fig.8 Emitter input capacitance
vs. emitter-base voltage
Ta
=25
°C
f
=1MHz
IC
=0A
10 20
50
100 200
500 1000 2000
5000 10000
ON
RESISTANCE
:
Ron(
)
BASE CURRENT : IB (mA)
1
0.1
0.2
0.5
2
5
10
20
50
100
Fig.9 "ON" resistance
vs. base current characteristics
Ta
=25
°C
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