- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30580 > 2SD1470 SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD1470 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 封裝： | UPAK-3 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | 2SD1470 |
2SD1470
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
60
V
Collector to emitter voltage
V
CEO
60
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
1A
Collector peak current
i
C(peak)*
1
2A
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
60
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60
—
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
10
AV
CB = 60 V, IE = 0
Emitter cutoff current
I
EBO
——
10
AV
EB = 7 V, IC = 0
DC current transfer ratio
h
FE
2000
—
100000
V
CE = 3 V, IC = 0.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.5
V
I
C = 500 mA, IB = 0.5 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
—
2.0
V
I
C = 500 mA, IB = 0.5 mA*
1
Notes: 1. Pulse test
2. Marking is “AT”.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1471ETTR | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1471DTTL | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1471ETTR | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1471ETUL | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1471ETUR | 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1470AT-TR-E | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SD14740P | 功能描述:TRANS NPN LF 60VCEO 6A TO-220F RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD1474PQ | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1475 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1476 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。