參數(shù)資料
型號: 2SD1471-DT
元件分類: 小信號晶體管
英文描述: SMALL SIGNAL TRANSISTOR
文件頁數(shù): 2/6頁
文件大?。?/td> 31K
代理商: 2SD1471-DT
2SD1471
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
40
V
Collector to emitter voltage
V
CEO
30
V
Emitter to base voltage
V
EBO
10
V
Collector current
I
C
300
mA
Collector peak current
i
C(peak)*
1
500
mA
Collector power dissipation
P
C*
2
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Pulse
≤ 10 ms, Duty cycle ≤ 20%
2. Value on the alumina ceramic board (12.5 x 30 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
40
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
30
V
I
C = 1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
10
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
——
1
AV
CB = 30 V, IE = 0
I
CEO
——
10
AV
CE = 24 V, RBE = ∞
DC current transfer ratio
h
FE1*
1
2000
100000
V
CE = 5 V, IC = 10 mA*
2
h
FE2*
1
3000
V
CE = 5 V, IC = 100 mA*
2
h
FE3*
1
3000
V
CE = 5 V, IC = 400 mA*
2
Collector to emitter saturation
voltage
V
CE(sat)
1.5
V
I
C = 100 mA, IB = 0.1 mA*
2
Base to emitter saturation
voltage
V
BE(sat)
2.0
V
I
C = 100 mA, IB = 0.1 mA*
2
Notes: 1. The 2SD1471 is grouped by h
FE as follows.
2. Pulse test
Mark
DT
ET
h
FE1
2000 to 100000 5000 to 100000
h
FE2
3000 min
10000 min
h
FE3
3000 min
10000 min
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