參數(shù)資料
型號(hào): 2SD1508
元件分類: 功率晶體管
英文描述: 1.5 A, 30 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-8H1A, 3 PIN
文件頁數(shù): 1/5頁
文件大小: 160K
代理商: 2SD1508
2SD1508
2009-12-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1508
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
10
V
DC
IC
1.5
Collector current
Pulse
ICP
3.0
A
Base current
IB
50
mA
Ta = 25°C
1.2
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
BASE
EMITTER
COLLECTOR
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