參數(shù)資料
型號: 2SD1535
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type Darlington(For high power amplification)
中文描述: 7 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3
文件頁數(shù): 2/2頁
文件大?。?/td> 65K
代理商: 2SD1535
2
Power Transistors
2SD1535
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
R
th(t)
— t
0
150
125
100
25
75
50
0
100
80
60
40
20
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2.0W)
(1)
(2)
(3)(4)
Ambient temperature Ta (C)
C
C
0
6
5
4
1
3
2
0
10
8
6
4
2
T
C
=25C
I
B
=20mA
10mA
5mA
3mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=100
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=100
25C
100C
T
C
=–25C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=2V
25C
–25C
T
C
=100C
F
F
0
8
2
6
4
7
1
Collector current I
C
(A)
5
3
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=100 (I
B1
=–I
B2
)
V
CC
=300V
T
C
=25C
t
stg
t
f
t
on
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
t=0.1ms
1ms
DC
Collector to emitter voltage V
CE
(V)
C
C
10
–3
10
2
10
–2
1
Time t (s)
10
–1
10
10
3
10
4
10
–2
10
–1
1
10
10
2
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
(2)
T
t
(
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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