參數(shù)資料
型號(hào): 2SD1584-ZL
元件分類: 功率晶體管
英文描述: 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA
封裝: TO-252, MP-3Z, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 598K
代理商: 2SD1584-ZL
2SK2140, 2SK2140-Z
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-state Resistance
RDS(on)
1.1
1.5
VGS = 10 V, ID = 3.5 A
Gate to Source Cutoff Voltage
VGS(off)
2.5
3.5
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
1.5
VDS = 10 V, ID = 3.5 A
Drain Leakage Current
IDSS
100
VDS = 600 V, VGS = 0
Gate to Source Leakage Current
IGSS
±100
VGS =
±30 V, VDS = 0
Input Capacitance
Ciss
930
VDS = 10 V
Output Capacitance
Coss
200
VGS = 0
Reverse Transfer Capacitance
Crss
40
f = 1 MHz
Turn-On Delay Time
td(on)
20
VGS = 10 V
Rise Time
tr
12
VDD = 150 V
Turn-Off Delay Time
td(off)
60
ID = 3.5 A, RG = 10
Fall Time
tf
12
RL = 42.9
Total Gate Charge
QG
30
VGS = 10 V
Gate to Source Charge
QGS
6.0
ID = 7.0 V
Gate to Drain Charge
QGD
15
VDD = 450 V
Diode Forward Voltage
VF(S-D)
1.0
IF = 7.0 A, VGS = 0
Reverse Recovery Time
trr
400
IF = 7.0 A
Reverse Recovery Charge
Qrr
2.0
di/dt = 50 A/
s
UNIT
V
S
A
nA
pF
ns
nC
V
ns
C
Test Circuit 3 Gate Charge
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG.
RG = 10
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
t = 1 us
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
t
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
相關(guān)PDF資料
PDF描述
2SD1584-ZM 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-252AA
2SD1584-Z 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD1584-Z-E1 Si, POWER TRANSISTOR
2SD1584-ZL 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD1584-ZM-E1 Si, POWER TRANSISTOR
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