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參數(shù)資料
| 型號： | 2SD1650 |
| 廠商： | 永盛國際集團 |
| 英文描述： | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |
| 中文描述： | 擴散硅功率晶體管（一般）的說明 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 86K |
| 代理商： | 2SD1650 |
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in
a plastic envelope with integrated efficiency diode,
primarily for use in horizontal deflection circuites of
colour television receivers
QUICK REFERENCE DATA
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-
MAX
1500
600
3.5
7.0
50
1.5
-
2.0
1.0
UNIT
V
V
A
A
W
V
A
V
T
mb
I
C
= 2.0A; I
B
= 0.4A
f = 16KHz
I
F
= 2.0A
I
C
=2A,I
B1
=-I
B2
=0.4A,V
CC
=140V
25
s
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-
-
-55
-
MAX
1500
600
3.5
7.0
1.5
3
50
150
150
UNIT
V
V
A
A
A
A
W
Tmb
25
SYMBOL
I
CE
I
CES
PARAMETER
Collector cut-off current
CONDITIONS
V
BE
= 0V; V
CE
= V
CESMmax
V
BE
= 0V; V
CE
= V
CESMmax
T
j
= 125
I
B
= 0A; I
C
= 100mA
L = 25mH
I
C
= 2.0A; I
B
= 0.4A
I
C
= 2.0A; I
B
= 0.4A
I
C
= 1A; V
CE
= 5V
I
F
= 2.0A
I
C
= 0.1A; V
CE
= 10V
V
CB
= 10V
I
C
=2A,I
B1
=-I
B2
=0.4A,V
CC
=140V
I
C
=2A,I
B1
=-I
B2
=0.4A,V
CC
=140V
MIN
-
-
MAX
0.5
1.0
UNIT
mA
mA
V
CEOsust
Collector-emitter sustaining voltage
-
V
V
CEsat
V
BEsat
h
FE
V
F
f
T
C
c
t
s
t
f
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 1MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
-
-
8
1.5
2.0
30
2.0
V
V
V
3
MHz
pF
100
4.5
1.0
s
s
ELECTRICAL CHARACTERISTICS
TO-3PML
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
SILICON DIFFUSED POWER TRANSISTOR
2SD1650
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|---|---|
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| 2SD1702TE | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 2SD1702TF | BJT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1651C-CTV-YB | 制造商:ON Semiconductor 功能描述: |
| 2SD1654 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO3PML 1500V 3.5A 50W BCE |
| 2SD1655 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO3P 1500V 5A 60W BCE |
| 2SD1656 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO3PML 1500V 6A 60W BCE |
| 2SD1658 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR 2-8H1A 50V 2A 10W ECB |
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