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參數(shù)資料
| 型號： | 2SD1695-M-AZ |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 35 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 104K |
| 代理商： | 2SD1695-M-AZ |
2SA1805
2004-07-07
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1805
Power Amplifier Applications
High breakdown voltage: VCEO = 140 V (min)
Complementary to 2SC4690
Recommended for 70 W high fidelity audio frequency amplifier output
stage
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
140
V
Collector-emitter voltage
VCEO
140
V
Base-emitter voltage
VEBO
5
V
DC
IC
10
Collector current
Pulse
ICP
20
A
Base current
IB
1
A
Collector power dissipation
(Tc = 25°C)
PC
80
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 140 V, IE = 0
―
5.0
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
5.0
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
140
―
V
hFE (1)
(Note)
VCE = 5 V, IC = 1 A
55
―
160
DC current gain
hFE (2)
VCE = 5 V, IC = 5 A
35
85
―
Collector-emitter saturation voltage
VCE (sat)
IC = 7 A, IB = 0.7 A
―
0.8
2.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 5 A
―
1.0
1.5
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
30
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
480
―
pF
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
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