參數(shù)資料
型號(hào)： 2SD1695
元件分類： 功率晶體管
英文描述： 2 A, 35 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù)： 4/6頁
文件大?。?/td> 222K
代理商： 2SD1695
'DWD 6KHHW'(-9'6
2SD1695
(/(&75,&$/ &+$5$&7(5,67,&6 7D
°°°°&
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to base voltage
VCBO
IC = 1.0 mA, IE = 0
273135
V
Collector to emitter voltage
VCEO
IC = 10 mA, RBE =
∞
27
31
35
V
Collector cutoff current
ICBO
VCB = 20 V, IE = 0
10
A
DC current gain
hFE1*VCE = 2.0 V, IC = 0.5 A
1,000
DC current gain
hFE2*VCE = 2.0 V, IC = 1.0 A
2,000
30,000
Collector saturation voltage
VCE(sat)*IC = 1.0 A, IB = 1.0 mA
0.9
1.2
V
Base saturation voltage
VBE(sat)*IC = 1.0 A, IB = 1.0 mA
1.6
2.0
V
Turn-on time
ton
0.5
s
Storage time
tstg
3.0
s
Fall time
tf
IC = 1.0 A, IB1 =
IB2 = 5.0 mA
RL = 20
, VCC 20 V
1.0
s