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參數(shù)資料
| 型號(hào)： | 2SD1741A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type |
| 中文描述： | 2 A, 180 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, I-G1, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 49K |
| 代理商： | 2SD1741A |
2
Power Transistors
2SD1741, 2SD1741A
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
Area of safe operation (ASO)
R
th(t)
— t
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
=Ta
(2) Without heat sink
(P
C
=1.3W)
(1)
(2)
Ambient temperature Ta (C)
C
C
0
24
20
16
4
12
8
0
1.2
1.0
0.8
0.6
0.4
0.2
I
B
=7mA
6mA
5mA
4mA
3mA
2mA
1mA
T
C
=25C
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
1.2
1.0
0.8
0.2
0.6
0.4
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=10V
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
0.03
Collector current I
C
(A)
0.3
0.01
10
1
0.1
0.03
0.3
3
I
C
/I
B
=10
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=10V
25C
–25C
T
C
=100C
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
=10V
f=1MHz
T
C
=25C
T
T
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
5ms
t=1ms
300ms
2
2
Collector to emitter voltage V
CE
(V)
C
C
10
–4
10
10
–3
10
–1
10
–2
1
10
3
10
2
10
4
10
–1
1
10
10
2
10
3
(1) Without heat sink
(2) With a 50
×
50
×
2mm Al heat sink
(1)
(2)
Time t (s)
T
t
(
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