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參數(shù)資料
| 型號： | 2SD1758TL/Q |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CPT3, SC-63, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 151K |
| 代理商： | 2SD1758TL/Q |
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c
2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.C
Data Sheet
2SD1758 / 2SD1862
Packaging specifications and hFE
Type
hFE
TL
2500
TV2
2500
2SD1758
2SD1862
QR
Package
Taping
Code
Basic ordering
unit (pieces)
hFE values are classified as follows :
Item
hFE
R
180 to 390
Q
120 to 270
Electrical characteristic curves
COLLECTOR
CURRENT
:
I
C
(mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1 Grounded emitter propagation
characteristics
02.0
1000
2000
1
200
500
100
20
50
10
2
5
0.2
0.6
0.4
0.8 1.0 1.2 1.4 1.6 1.8
Ta
=25°C
VCE
=3V
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2 Grounded emitter output
characteristics
0
0.1
0.2
0.3
0.4
0.5
0.4
0.8
1.2
1.6
2.0
0
Ta
=25°C
IB
=0A
3.0mA
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
0.3mA
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(mA)
Fig.3 DC current gain vs. collector
current
5
500
10
20
50 100 200
500 1A 2A
200
100
50
20
Ta
=25°C
VCE
=3V
1V
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV
)
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
500
20
200
100
50
5
10 20
50 100 200
500 1A 2A
Ta
=25°C
10
20
IC/IB
=50
BASE
SATURATION
VOLTAGE
:
V
BE(sat)
(V)
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
5
1
2
0.2
0.5
0.1
10 20
50 100 200
500 1A 2A
Ta
=25°C
IC/IB
=10
EMITTER CURRENT : IE (mA)
TRANSITION
FREQUENCY
:
f
T
(MHz)
Fig.6 Transition frequency vs. emitter
current
-2
1
200
5 10 20 50 100200 500 1A
500
1000
100
50
20
Ta
=25°C
VCE
=5V
0.5
200
10
500
1000
100
20
50
12
5
10
20
Ta
=25°C
f
=1MHz
IE
=0A
IC
=0A
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(p
F)
EMITTER
INPUT
CAPACITANCE
:
Cib
(pF)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Cib
Cob
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area
5
0.1
50
2
0.2
0.5
1
0.1
0.05
0.2
0.5
1
2
5
10
20
0.01
0.02
(2SD1758)
PW=100ms
TC
=25°C
Single
nonrepetitive
pulse
Ic Max
DC
Ic Max Pulse
Ta
=25°C
Single
nonrepetitive
pulse
P
W=
10ms
P
W=
100ms
0.2
0.5
1
2
5
10
20
50
3
2
1
0.1
0.2
0.5
0.05
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(A)
Fig.9 Safe operating area
(2SD1862)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD1758TLR | 功能描述:兩極晶體管 - BJT NPN 32V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD1759TL | 功能描述:達林頓晶體管 NPN 40V 2A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD1760FRATLR | 制造商:ROHM SEMICONDUCTOR 功能描述:HIGH REL TRANS GP BJT NPN 50V 3A TR |
| 2SD1760TL/Q | 制造商:ROHM Semiconductor 功能描述:3000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD1760TLP | 功能描述:兩極晶體管 - BJT DVR NPN 50V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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