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參數(shù)資料
| 型號： | 2SD1851 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ULTRA SMALL, CP, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SD1851 |
Data Sheet D14902EJ2V0DS
2
2SC2334
ELECTRICAL CHARACTERISTICS (TA = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
VCEO(SUS)
IC = 5.0 A, IB1 = 0.5 A, L = 1 mH
100
V
VCEX(SUS)1
IC = 5.0 A, IB1 =
IB2 = 0.5 A,
VBE(OFF) =
5.0 V, L = 180
H, clamped
100
V
Collector to emitter voltage
VCEX(SUS)2
IC = 10 A, IB1 = 1.0 A, IB2 =
0.5 A,
VBE(OFF) =
5.0 V, L = 180
H, clamped
100
V
ICBO
VCB = 100 V, IE = 0 A
10
A
ICER
VCE = 100 V, RBE = 51
, TA = 125°C
1.0
mA
ICEX1
VCE = 100 V, VBE(OFF) =
1.5 V
10
A
Collector cutoff current
ICEX2
VCE = 100 V, VBE(OFF) =
1.5 V,
TA = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB = 5.0 V, IC = 0 A
10
A
hFE1
VCE = 5.0 V, IC = 0.5 A
Note
40
hFE2
VCE = 5.0 V, IC = 3.0 A
Note
40
200
DC current gain
hFE3
VCE = 5.0 V, IC = 5.0 A
Note
20
Collector saturation voltage
VCE(sat)
IC = 5.0 A, IB = 0.5 A
Note
0.6
V
Base saturation voltage
VBE(sat)
IC = 5.0 A, IB = 0.5 A
Note
1.5
V
Turn-on time
ton
0.5
s
Storage time
tstg
1.5
s
Fall time
tf
IC = 5.0 A, RL = 10
,
IB1 =
IB2 = 0.5 A, VCC 50 V
Refer to the test circuit.
0.5
s
Note Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
40 to 80
60 to 120
100 to 200
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
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相關代理商/技術參數(shù) |
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|---|---|
| 2SD1851-TB-E | 制造商:SANYO 功能描述:NPN 50V 0.2A 5000 CP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL NPN 80V 50A SOT23 制造商:Sanyo 功能描述:0 |
| 2SD1853-AA | 制造商:SANYO Semiconductor Co Ltd 功能描述:Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS DARL NPN 80V 60A TO-92 |
| 2SD1855 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANS. TO-220FP80V 4A 30W BCE |
| 2SD1856 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1857ATV2P | 功能描述:兩極晶體管 - BJT DVR NPN 160V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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