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參數(shù)資料
| 型號： | 2SD1869-C |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 29K |
| 代理商： | 2SD1869-C |
2SD1868, 2SD1869
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SA1868
2SA1869
Unit
Collector to base voltage
V
CBO
160
200
V
Collector to emitter voltage
V
CEO
160
200
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
100
mA
Collector power dissipation
P
C
0.9
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
2SD1868 V
(BR)CBO
160
—
V
I
C = 10 A, IE = 0
2SD1869
200
Collector to emitter
breakdown voltage
2SD1868 V
(BR)CEO
160
—
V
I
C = 1 mA, RBE = ∞
2SD1869
200
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 10 A, IC = 0
Collector cutoff
current
2SD1868 I
CBO
——
10
AV
CB = 140 V, IE = 0
2SD1869
V
CB = 160 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
—
320
V
CE = 5 V, IC = 10 mA
h
FE2
30
—
V
CE = 5 V, IC = 1 mA
Base to emitter voltage
V
BE
—
1.5
V
CE = 5 V, IC = 10 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
2VI
C = 30 mA, IB = 3 mA
Gain bandwidth product
f
T
—
140
—
MHz
V
CE = 5 V, IC = 10 mA
Collector output capacitance
C
ob
—
3.8
—
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Note:
1. The 2SD1868 and 2SD1869 are grouped by h
FE1 as follows.
Grade
B
C
D
h
FE1
60 to 120
100 to 200
160 to 320
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD1869C | SMALL SIGNAL TRANSISTOR |
| 2SD1869B | SMALL SIGNAL TRANSISTOR |
| 2SD1869-B | SMALL SIGNAL TRANSISTOR |
| 2SD1868-C | SMALL SIGNAL TRANSISTOR |
| 2SD1868-D | SMALL SIGNAL TRANSISTOR |
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