參數(shù)資料
型號(hào): 2SD1904-S
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 功率晶體管
英文描述: 5 A, 50 V, NPN, Si, POWER TRANSISTOR
封裝: TO-220MF, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 41K
代理商: 2SD1904-S
2SB1268/2SD1904
No.2264–2/4
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Switching Time Test Circuit
Continued from preceding page.
VR
RB
1
VCC=20V
VBE= --5V
+
50
INPUT
OUTPUT
RL
10
1
F1F
PW=20
s
IB1
tr, tf
≤15ns
IB2
IC=10IB1= --10IB2=2A
(For PNP, the polarity is reversed.)
100
ITR09475
IC -- VCE
0
0.4
0.8
1.2
1.6
2.0
2.4
0
2
4
6
8
10
IB=0
ITR09474
IC -- VCE
0
--0.8
--0.4
--1.2
--1.6
--2.0
--2.4
0
--2
--4
--6
--8
--10
IB=0
--100mA
--200mA
2SB1268
2SD1904
--300mA
--400mA
500mA
400mA
300mA
200mA
100mA
50mA
ITR09476
ITR09477
--0.2
0
--0.4
--0.6
--1.0
--1.2
--0.8
--1.4
--8
--9
--6
--7
--10
--4
--5
--3
--2
--1
0
IC -- VBE
0.8
0.2
0
0.4
0.6
1.0
1.4
1.2
2
1
0
10
8
9
6
5
7
4
3
IC -- VBE
2SB1268
VCE= --2V
Ta
=
80
°C
25
°C
--
2
0°
C
Ta
=
80
°C
25
°C
--20
°C
2SD1904
VCE=2V
--500mA
--450mA --350mA
--250mA
--150mA
--50mA
450mA 350mA
250mA
150mA
Collector
Current,
I C
A
Collector-to-Emitter Voltage, VCE – V
Collector
Current,
I C
A
Collector-to-Emitter Voltage, VCE – V
Collector
Current,
I C
A
Base-to-Emitter Voltage, VBE – V
Collector
Current,
I C
A
Base-to-Emitter Voltage, VBE – V
相關(guān)PDF資料
PDF描述
2SB1268-R 5 A, 50 V, PNP, Si, POWER TRANSISTOR
2SB1268-R 5 A, 50 V, PNP, Si, POWER TRANSISTOR
2SD1904S 5 A, 50 V, NPN, Si, POWER TRANSISTOR
2SB1268-S 5 A, 50 V, PNP, Si, POWER TRANSISTOR
2SD1904R 5 A, 50 V, NPN, Si, POWER TRANSISTOR
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