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參數(shù)資料
| 型號： | 2SD1949T106/R |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | UMT3, 3 PIN |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 2SD1949T106/R |
Data Sheet PU10353EJ02V0DS
3
2SC5843
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
20
5
10
15
25
30
35
01
2
3
40 A
70 A
100 A
130 A
160 A
190 A
IB = 10 A
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.3
0.2
0.1
0
48
6
210
VCE = 1 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
0.9
1.0
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
0.9
1.0
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
250
200
150
80
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Remark The graphs indicate nominal characteristics.
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