- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49979 > 2SD2000P (PANASONIC CORP) 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 2SD2000P |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | ROHS COMPLIANT, SC-67, TO-220F-A1, FULL PACK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 251K |
| 代理商： | 2SD2000P |
Power Transistors
1
Publication date: September 2003
SJD00238BED
2SD2000
Silicon NPN triple diffusion planar type
For power switching
■ Features
High-speed switching
Satisfactory linearity of forward current transfer ratio h
FE
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with one screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 25 mA, IB = 0
60
V
Base-emitter voltage
VBE
VCE
= 4 V, I
C
= 4 A
2.0
V
Collector-base cut-off current (Emitter open)
ICBO
VCB = 80 V, IE = 0
100
A
Emitter-base cut-off current (Collector open)
IEBO
VEB = 6 V, IC = 0
100
A
Forward current transfer ratio
hFE1 *
VCE
= 4 V, I
C
= 1 A
70
250
hFE2
VCE = 4 V, IC = 4 A
20
Collector-emitter saturation voltage
VCE(sat)
IC = 4 A, IB = 0.4 A
1.5
V
Transition frequency
fT
VCE
= 12 V, I
C
= 0.2 A, f = 10 MHz
80
MHz
Turn-on time
ton
IC = 4 A, IB1 = 0.4 A, IB2 = 0.4 A,
0.3
s
Storage time
tstg
VCC = 50 V
1.0
s
Fall time
tf
0.2
s
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
4A
Peak collector current
ICP
8A
Base current
IB
1A
Collector power
PC
35
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2012 | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD2031BRR | 100 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030CRR | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030CRF | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SD2030CRF | 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2000Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR |
| 2SD2000R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-127VAR |
| 2SD2004 | 制造商:ROHM 制造商全稱:Rohm 功能描述:1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
| 2SD2004N | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
| 2SD2004P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SIP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。