參數(shù)資料
型號: 2SD2030
元件分類: 小信號晶體管
英文描述: 100 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92, 3 PIN
文件頁數(shù): 2/8頁
文件大小: 173K
代理商: 2SD2030
2SA0886
2
SJD00003BED
VBE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
VCE(sat) IC
Cob VCB
VCER RBE
ICEO Ta
0
160
40
120
80
0
1.6
1.2
0.8
0.4
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
0
–10
–2
–4
–8
–6
0
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
TC=25C
IB=–40mA
–5mA
–10mA
–15mA
–20mA
–25mA
–30mA
–35mA
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
–0.01
–0.1
–1
–10
–0.1
–1
IC/IB=10
TC=100C
25C
–25C
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
–0.01
–1
–0.1
–1
–10
TC=–25C
25C
100C
IC/IB=10
Base-emitter
saturation
voltage
V
BE(sat)
(V)
Collector current I
C (A)
–0.01
–1
–0.1
1
10
100
1000
VCE=–5V
TC=100C
25C
–25C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
0.01
0.1
1
10
0
240
200
160
120
80
40
Transition
frequency
f
T
(MHz)
Emitter current I
E (A)
VCB=–5V
f=200MHz
TC=25C
–1
–10
–100
0
20
40
60
80
100
120
140
IE=0
f=1MHz
TC=25C
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
Collector-base voltage V
CB (V)
0
–60
–50
–40
–30
–20
–10
0.001
0.01
0.1
1
10
TC=25C
Base-emitter resistance R
BE (k)
Collector-emitter
voltage
(Resistor
between
B
and
E)
V
CER
(V)
1
1000
100
10
0
120
20
100
40
80
60
Ambient temperature T
a (°C)
VCE=–12V
I CEO
(T
a)
I CEO
(T
a
=
25
°C)
This product complies with the RoHS Directive (EU 2002/95/EC).
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