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參數(shù)資料
| 型號： | 2SD2067(TENTATIVE) |
| 廠商： | Panasonic Corporation |
| 英文描述： | 2SD2067 (Tentative) - Silicon NPN epitaxial planer type |
| 中文描述： | 2SD2067（暫定） -硅npn型外延式龍門 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SD2067(TENTATIVE) |
2
Transistor
2SD2067
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
C
ob
— V
CB
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
0
10
8
2
6
4
0
3.0
2.5
2.0
1.5
1.0
0.5
Ta=25C
I
B
=180
μ
A
30
μ
A
60
μ
A
90
μ
A
120
μ
A
150
μ
A
Collector to emitter voltage V
CE
(V)
C
C
0.01
3
1
0.1
0.03
Collector current I
C
(A)
0.3
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=1000
Ta=100C
25C
–25C
C
C
0.01
3
1
0.1
0.03
Collector current I
C
(A)
0.3
0.1
0.3
1
3
10
30
100
I
C
/I
B
=1000
Ta=–25C
25C
100C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
10
10
2
10
3
10
4
10
5
V
CE
=10V
Ta=100C
25C
–25C
F
F
1
3
10
30
100
0
60
50
40
30
20
10
I
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
C
o
0.1
Collector to emitter voltage V
CE
(V)
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
C
C
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參數(shù)描述 |
|---|---|
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