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參數(shù)資料
| 型號(hào)： | 2SD2112 |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 6 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | 2SD2112 |
2SD2112
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Rating
Unit
Collector to base voltage
V
CBO
120
V
Collector to emitter voltage
V
CEO
120
V
Emitter to base voltage
V
EBO
7V
Collector current
I
C
6A
Collector peak current
I
C(peak)
12
A
Collector power dissipation
P
C
2W
P
C*
1
25
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
C to E diode forward current
I
D*
1
6A
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120
—
V
I
C = 0.1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
V
I
C = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 50 mA, IC = 0
Collector cutoff current
I
CBO
——10
A
V
CB = 100 V, IE = 0
I
CEO
——10
V
CE = 100 V, RBE = ∞
DC current transfer ratio
h
FE
1000
—
20000
V
CE = 3 V, IC = 3 A*
1
Collector to emitter saturation
V
CE(sat)1
—
1.5
V
I
C = 3 A, IB = 6 mA*
1
voltage
V
CE(sat)2
—
3.0
I
C = 6 A, IB = 60 mA*
1
Base to emitter saturation
V
BE(sat)1
—
2.0
V
I
C = 3 A, IB = 6 mA*
1
voltage
V
BE(sat)2
—
3.5
I
C = 6 A, IB = 60 mA*
1
C to E diode forward voltage
V
D
—
3.0
V
I
D = 6 A*
1
Note:
1. Pulse test.
See switching characteristic curve of 2SD1606.
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| 2SD2113 | 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Darlington Power Transistor |
| 2SD2114 | 制造商:HTSEMI 制造商全稱(chēng):Shenzhen Jin Yu Semiconductor Co., Ltd. 功能描述:TRANSISTOR (NPN) |
| 2SD2114_11 | 制造商:SECOS 制造商全稱(chēng):SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic-Encapsulate Transistor |
| 2SD2114K | 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:High-current Gain MediumPower Transistor (20V, 0.5A) |
| 2SD2114K_1 | 制造商:ROHM 制造商全稱(chēng):Rohm 功能描述:High-current Gain Medium Power Transistor (20V, 0.5A) |
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