參數(shù)資料
型號(hào): 2SD2115S
元件分類: 小信號(hào)晶體管
英文描述: 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: DPAK-3
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 140K
代理商: 2SD2115S
2SD2115(L)/(S)
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
150
V
I
C = 1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60
V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
VI
E = 1 mA, IC = 0
Collector cutoff current
I
CBO
——
10
AV
CB = 100 V, IE = 0
DC current transfer ratio
h
FE
150
V
CE = 5 V, IC = 1.5 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
0.8
V
I
C = 1.5 A, IB = 0.05 A*
1
Base to emitter saturation
voltage
V
BE(sat)
1.3
V
I
C = 1.5 A, IB = 0.05 A*
1
Fall time
t
f
0.6
sI
C = 1.5 A, IB1 = –IB2 = 50 mA
Note:
1. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
3.0
0.3
1.0
Collector
current
I
C
(A)
0.1
0.03
110
3
30
100
Collector to emitter voltage VCE (V)
Ta = 25
°C,
1 shot pulse
iC(peak)
IC(max)
PW
=
10
ms
1
ms
Area of Safe Operation
DC
Operation(T
C =
25
°
C)
相關(guān)PDF資料
PDF描述
2SD2115L 2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2116 700 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2118T200/S 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2118T201/QS 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SD2118T200/QR 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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