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參數(shù)資料
| 型號： | 2SD2121(S) |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 31K |
| 代理商： | 2SD2121(S) |
2SD2121(L)/(S)
2
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
35
—
V
I
C = 1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
35
—
V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
5—
—
V
I
E = 1 mA, IC = 0
Collector cutoff current
I
CBO
——
20
AV
CB = 35 V, IE = 0
DC current transfer ratio
h
FE1*
1
60
—
320
V
CE = 2 V, IC = 0.5 A*
2
h
FE2
20
—
V
CE = 2 V, IC = 1.5 A*
2
Base to emitter voltage
V
BE
—
1.5
V
CE = 2 V, IC = 1.5 A*
2
Collector to emitter saturation
voltage
V
CE(sat)
—
1.0
V
I
C = 2 A, IB = 0.2 A*
2
Notes: 1. The 2SD2121(L)/(S) is grouped by h
FE1 as follows.
BC
D
60 to 120
100 to 200
160 to 320
2. Pulse test.
Maximum Collector Dissipation Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Collector
power
dissipation
P
C
(W)
10
1.0
3.0
Collector
current
I
C
(A)
0.3
0.1
110
3
30
100
Collector to emitter voltage VCE (V)
Ta = 25
°C
1 shot pulse
iC(peak)
IC(max)
1
ms
Area of Safe Operation
DC
Operation
(T
C =
25
°C)
PW = 10 ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2121(S)C | POWER TRANSISTOR |
| 2SD2121(L)C | POWER TRANSISTOR |
| 2SD2121(L)D | POWER TRANSISTOR |
| 2SD2121(S)D | POWER TRANSISTOR |
| 2SD2121SD | 2500 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2122 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD2122(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-251AA |
| 2SD2122(L)-(1)B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SD2122(L)-(1)C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
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