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參數(shù)資料
| 型號(hào)： | 2SD2123(L)B |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWER TRANSISTOR |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 35K |
| 代理商： | 2SD2123(L)B |
2SD2122(L)/(S), 2SD2123(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
2SD2122(L)/(S) 2SD2123(L)/(S) Unit
Collector to base voltage
V
CBO
180
V
Collector to emitter voltage
V
CEO
120
160
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
1.5
A
Collector peak current
I
C(peak)
33A
Collector power dissipation
P
C*
1
18
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
2SD2122(L)/(S)
2SD2123(L)/(S)
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
180
—
180
—
V
I
C = 1 mA, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
120
—
160
—
V
I
C = 10 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5—
—
5
—
V
I
E = 1 mA, IC = 0
Collector cutoff current
I
CBO
——10——10
AV
CB = 160 V, IE = 0
DC current transfer ratio h
FE1*
2
60
—
200
60
—
200
A
V
CE = 5 V, IC = 150 mA*
1
h
FE2
30
—
30
—
V
CE = 5 V, IC = 500 mA*
1
Collector to emitter
saturation voltage
V
CE(sat)
——1
V
I
C = 500 mA,
I
B = 50 mA*
1
Base to emitter voltage
V
BE
—
1.5
—
1.5
V
CE = 5 V, IC = 150 mA*
1
Gain bandwidth product f
T
—
180
—
180
—
MHz
V
CE = 5 V, IC = 150 mA*
1
Collector output
capacitance
Cob
—
14
—
14
—
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. Pulse test
2. The 2SD2122(L)/(S) and 2SD2123(L)/(S) are grouped by h
FE1 as follows.
BC
60 to 120
100 to 200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2123S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD2124 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SD2124(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-251AA |
| 2SD2124(L)-(1) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BJT |
| 2SD2124(L)/(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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