參數(shù)資料
型號: 2SD2130
元件分類: 功率晶體管
英文描述: 4 A, 50 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-8H1A, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 161K
代理商: 2SD2130
2SD2130
2010-03-10
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2130
Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A, IB = 10 mA)
Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60 ± 10
V
Collector-emitter voltage
VCEO
60 ± 10
V
Emitter-base voltage
VEBO
6
V
DC
IC
±4
Collector current
Pulse
ICP
±6
A
Base current
IB
0.5
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
BASE
EMITTER
≈ 5 kΩ
≈ 200 Ω
COLLECTOR
相關(guān)PDF資料
PDF描述
2SD2134Q 1 A, 150 V, NPN, Si, POWER TRANSISTOR
2SD2136R 3 A, 60 V, NPN, Si, POWER TRANSISTOR
2SD2137AP 3 A, 80 V, NPN, Si, POWER TRANSISTOR
2SD2147C6/RS 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126
2SD2147C6/QR 5 A, 20 V, NPN, Si, POWER TRANSISTOR, TO-126
相關(guān)代理商/技術(shù)參數(shù)
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