- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371528 > 2SD2137A (PANASONIC CORP) Silicon PNP epitaxial planar type(For power amplification) PDF資料下載
參數(shù)資料
| 型號： | 2SD2137A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type(For power amplification) |
| 中文描述： | 3 A, 80 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 54K |
| 代理商： | 2SD2137A |
1
Power Transistors
2SD2137, 2SD2137A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1417 and 2SB1417A
I
Features
G
High forward current transfer ratio h
FE
which has satisfactory linearity
G
Low collector to emitter saturation voltage V
CE(sat)
G
Allowing supply with the radial taping
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
6
5
3
15
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD2137
2SD2137A
2SD2137
2SD2137A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 0.375A
V
CE
= 5V, I
C
= 0.2A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
min
60
80
70
10
typ
30
0.3
2.5
0.2
max
100
100
100
100
100
250
1.8
1.2
Unit
μ
A
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
2SD2137
2SD2137A
2SD2137
2SD2137A
2SD2137
2SD2137A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±
0.2
0.55
±
0.1
2.5
±
0.2
2.5
±
0.2
4
±
0
1
±
0
2
±
0
1
±
0
S
5.0
±
0.1
2.25
±
0.2
1.2
±
0.1
0.65
±
0.1
1.05
±
0.1
0.55
±
0.1
C1.0
90
°
C1.0
1
2
3
0.35
±
0.1
Note: Ordering can be made by the common rank (PQ rank h
FE
= 70 to 250) in the rank classification.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2138 | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 2SD2138A | Silicon PNP epitaxial planar type Darlington(For power amplification) |
| 2SD2139 | Silicon NPN triple diffusion planar type(For high-current amplification ratio, power amplification) |
| 2SD2145 | 2SD2145 |
| 2SD2151 | Silicon NPN epitaxial planar type(For power switching) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2137AO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD2137AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
| 2SD2137APA | 功能描述:TRANS NPN LF 80VCEO 3A MT-4 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2137APQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-126VAR |
| 2SD2137AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-221VAR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。