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參數(shù)資料
| 型號(hào)： | 2SD2215A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type) |
| 中文描述： | 0.75 A, 300 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | IPAK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 49K |
| 代理商： | 2SD2215A |
1
Power Transistors
2SD2215, 2SD2215A
Silicon NPN triple diffusion planar type
For power amplification
I
Features
G
High collector to base voltage V
CBO
G
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
350
400
250
300
5
1.5
0.75
15
1.3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD2215
2SD2215A
2SD2215
2SD2215A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 350V, V
BE
= 0
V
CE
= 400V, V
BE
= 0
V
CE
= 150V, I
B
= 0
V
CE
= 200V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 10V, I
C
= 0.3A
V
CE
= 10V, I
C
= 1A
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= – 0.1A,
V
CC
= 50V
min
250
300
70
10
typ
30
0.5
2
0.5
max
1
1
1
1
1
250
1.5
1
Unit
mA
mA
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SD2215
2SD2215A
2SD2215
2SD2215A
2SD2215
2SD2215A
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package
Unit: mm
1:Base
2:Collector
3:Emitter
I Type Package (Y)
7
±
0
7.0
±
0.3
3.0
±
0.2
3.5
±
0.2
1
+
–
0
±
0
1
±
0
4.6
±
0.4
2
1
3
1.1
±
0.1
0.75
±
0.1
2.3
±
0.2
0.85
±
0.1
0.4
±
0.1
7.0
±
0.3
0.75
±
0.1
2.3
±
0.2
4.6
±
0.4
1.1
±
0.1
1
±
0
7
±
0
2.0
±
0.2
0.9
±
0.1
0 to 0.15
3.5
±
0.2
2
±
0
1
1
2
±
0
3.0
±
0.2
1
1
2
3
0 to 0.15
2.5
0.5 max.
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PDF描述 |
|---|---|
| 2SD2216J | SILICON NPN EPITAXIAL PLANAR TYPE |
| 2SD2216L | For General Amplification |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2215AP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 750MA I(C) | TO-251VAR |
| 2SD2215AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 750MA I(C) | TO-251VAR |
| 2SD2215P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 750MA I(C) | TO-251VAR |
| 2SD2215Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 750MA I(C) | TO-251VAR |
| 2SD2216 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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