- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄33436 > 2SD2223 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB PDF資料下載
參數(shù)資料
| 型號： | 2SD2223 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | TO-220MF, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 2SD2223 |
2SB1471 / 2SD2223
No.3365-1/5
Applications
Motor drivers, printer hammer drivers, relay drivers, voltage regulator control.
Features
Suitable for sets whose height is restricted.
High DC current gain.
Large current capacity and wide ASO.
Specifications ( ) : 2SB1471
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)70
V
Collector-to-Emitter Voltage
VCEO
(--)60
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)4
A
Collector Current (Pulse)
ICP
(--)6
A
Collector Dissipation
PC
1.65
W
Tc=25
°C30
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0A
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)5V, IC=0A
(--)3.0
mA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)2A
2000
5000
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)2A
20
MHz
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)2A, IB=(--)4mA
(--1.0)0.9
(--)1.5
V
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)4mA
(--)2.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)5mA, IE=0A
(--)70
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)50mA, RBE=∞
(--)60
V
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN3365A
83006IA MS IM TC-0000041 / O2098HA (KT) / N120MH, JK(KOTO)
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SB1471 / 2SD2223
PNP / NPN Epitaxial Planar Silicon Darlington Transistors
Driver Applications
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD2227STP | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2226KT146 | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D43-A | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D43 | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2228D43-T1 | 500 mA, 16 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2224 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Driver Applications |
| 2SD2225 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 2SD22250RA | 功能描述:TRANS NPN 120VCEO 500MA MT-2 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2225Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SD2225R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-71 |
發(fā)布緊急采購，3分鐘左右您將得到回復。