- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄30591 > 2SD2225S (PANASONIC CORP) 500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SD2225S |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 234K |
| 代理商： | 2SD2225S |
2SJ554
Rev.4.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel
Dissipation
Pch
(W)
Case Temperature
Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
–50
0
–10
–20
–30
–40
0–2
–4
–6
–8
–10
–50
0
–10
–20
–30
–40
0
–1–2–3–4–5
Tc = 75°C
200
0
50
100
150
0
50
100
150
200
VDS = –10 V
Pulse Test
–10 V
–5 V
–8 V
–4 V
–3.5 V
–2.5 V
–3 V
VGS = –2 V
Pulse Test
Drain to Source Voltage
VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
–100
–300
–10
–30
–0.3
–1
–3
–0.1
–0.3
–1
–3
–10
–30
–100
–1000
Ta = 25°C
PW
= 10
ms
(1
shot)
DC
Operation
(Tc
= 25
°C)
1 ms
10
s
100
s
Operation in
this area is
limited by RDS (on)
Gate to Source Voltage
VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
0
–1
–2
–3
–4
0
–4
–8
–12
–16
–20
Pulse Test
ID = –50 A
–20 A
–10 A
Drain Current
ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–3
–100 –300
–1
–30
–10
–1000
1
0.5
VGS = –4 V
–10 V
Pulse Test
–25°C
25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2225Q | 500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2225R | 500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2227STPW | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2227STP/V | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2226KT146V | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2226K | 制造商:ROHM 制造商全稱:Rohm 功能描述:General Purpose Transistor (50V, 0.15A) |
| 2SD2226KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2226KT146V | 功能描述:兩極晶體管 - BJT NPN 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2226KT146W | 功能描述:兩極晶體管 - BJT NPN 50V 150MA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2226KU | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SOT-23VAR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。