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參數資料
| 型號： | 2SD2240G-R |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 185 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSMINI3-F3, 3 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 219K |
| 代理商： | 2SD2240G-R |
Transistors
1
Publication date: June 2007
SJC00407AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2240G
Silicon NPN epitaxial planar type
For high breakdown voltage low-frequency and low-noise
amplification
■ Features
High collector-emitter voltage (Base open) V
CEO
Low noise voltage NV
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing.
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
130 to 220
185 to 330
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
185
V
Collector-emitter voltage (Base open)
VCEO
185
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
A
Peak collector current
ICP
100
A
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC
= 100 A, I
B
= 0
185
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 100 V, IE = 01
A
Forward current transfer ratio *
hFE
VCE
= 5 V, I
C
= 10 mA
130
330
Collector-emitter saturation voltage
VCE(sat)
IC = 30 mA, IB = 3 mA
1
V
Transition frequency
fT
VCB = 10 V, IE = 10 mA, f = 200 MHz
150
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
2.3
pF
(Common base, input open circuited)
Noise voltage
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB
150
mV
Rg = 100 k
, Function = FLAT
■ Package
Code
SSMini3-F3
Marking Symbol: P
Pin Name
1: Base
2: Emitter
3: Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SD2240JRL | 功能描述:TRANS NPN 150VCEO 50MA SSMINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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| 2SD2240S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | SC-75 |
| 2SD2241 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (SWITCHING APPLICATIONS) |
| 2SD2241(Q) | 制造商:Toshiba 功能描述:NPN 100V 4A 2000 TO220NIS Bulk |
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