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參數(shù)資料
| 型號： | 2SD2242 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 中文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-4-A1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 61K |
| 代理商： | 2SD2242 |
1
Power Transistors
2SD2242, 2SD2242A
Silicon NPN triple diffusion planar type Darlington
For power amplification
I
Features
G
High foward current transfer ratio h
FE
G
High-speed switching
G
Allowing supply with the radial taping
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
5
8
4
15
2
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
2SD2242
2SD2242A
2SD2242
2SD2242A
T
C
=25
°
C
Ta=25
°
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2*
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= –12mA,
V
CC
= 50V
min
60
80
1000
2000
typ
20
0.5
4
1
max
200
200
500
500
2
10000
2.5
2
4
Unit
μ
A
μ
A
mA
V
V
V
MHz
μ
s
μ
s
μ
s
2SD2242
2SD2242A
2SD2242
2SD2242A
2SD2242
2SD2242A
*
h
FE2
Rank classification
Rank
Q
P
h
FE2
2000 to 5000
4000 to 10000
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±
0.2
0.55
±
0.1
2.5
±
0.2
2.5
±
0.2
4
±
0
1
±
0
2
±
0
1
±
0
S
5.0
±
0.1
2.25
±
0.2
1.2
±
0.1
0.65
±
0.1
1.05
±
0.1
0.55
±
0.1
C1.0
90
°
C1.0
1
2
3
0.35
±
0.1
B
E
C
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PDF描述 |
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| 2SD2242A | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
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| 2SD2249 | Silicon NPN epitaxial planer type(For low-frequency power amplification) |
| 2SD2250 | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2242/2SD2242A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD2242. 2SD2242A - NPN Transistor Darlington |
| 2SD22420PA | 功能描述:TRANS NPN 60VCEO 4A MT-4 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2242A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type Darlington(For power amplification) |
| 2SD2242AQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | TO-126VAR |
| 2SD2242AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | TO-126VAR |
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