參數資料
型號: 2SD2266
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type(For power switching)
中文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: MT4, 3 PIN
文件頁數: 2/3頁
文件大?。?/td> 53K
代理商: 2SD2266
2
Power Transistors
2SD2266
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
V
CE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
=Ta
(2) Without heat sink
(P
C
=2.0W)
(1)
(2)
Ambient temperature Ta (C)
C
C
0
8
2
6
4
7
1
5
3
0
4
3
1
2
I
B
=40mA T
C
=25C
35mA
30mA
25mA
20mA
15mA
10mA
5mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
4
1
3
2
0
6
5
4
3
2
1
V
CE
=4V
T
C
=–25C
25C
100C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
10
10
2
10
3
10
4
V
CE
=4V
T
C
=100C
25C
–25C
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.1
1
10
100
1000
V
=12V
f=10MHz
T
C
=25C
T
T
1
10
100
1000
3
30
300
1
10
100
1000
10000
I
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
C
o
0
8
2
6
4
7
1
Collector current I
C
(A)
5
3
0.01
0.1
1
10
100
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=10 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25C
t
stg
t
f
t
on
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
t=1ms
DC
I
CP
I
C
Collector to emitter voltage V
CE
(V)
C
C
相關PDF資料
PDF描述
2SD2271 NPN TRIPLE DIFFUSED TYPE (MOTOR DRIVER, HIGH CURRENT SWITCHING APPLICATIONS)
2SD2273 Silicon NPN triple diffusion planar type Darlington(For power amplification)
2SD2275 Silicon NPN triple diffusion planar type Darlington(For power amplification)
2SD2276 Silicon NPN triple diffusion planar type Darlington(For power amplification)
2SD2321 Silicon NPN epitaxial planer type(For low-frequency power amplification)
相關代理商/技術參數
參數描述
2SD227 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Medium Power Amplifiers and Switches
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