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參數(shù)資料
| 型號： | 2SD2462 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-8M1A, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 128K |
| 代理商： | 2SD2462 |
2SD2462
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2462
Power Amplifier Applications
High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.2 A)
Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA)
Complementary to 2SB1602
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
DC
IC
3
Collector current
Pulse
ICP
6
A
Base current
IB
0.6
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD247 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 80V 5A 50W BEC |
| 2SD2470TP | 功能描述:達林頓晶體管 NPN 10V 5A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD24790RA | 功能描述:TRANS NPN 100VCEO 2A MT-3 RoHS:否 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2480(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SD2495 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR FM20 110V 6A 30W BCE |
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