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參數(shù)資料
| 型號： | 2SD2486 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For power amplification with high forward current transfer ratio) |
| 中文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220F |
| 封裝： | TO-220, FULL PACK-3 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 70K |
| 代理商： | 2SD2486 |
2
Power Transistors
2SD2486
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
C
C
ob
— V
CB
t
on
, t
stg
, t
f
— I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
30
25
20
15
10
5
(1) T
=Ta
(2) With a 100
×
100
×
2mm
Al heat sink
(3) With a 50
×
50
×
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(2)
(3)
(4)
Ambient temperature Ta (C)
C
C
0
12
10
8
2
6
4
0
3.0
2.5
2.0
1.5
1.0
0.5
I
B
=5.0mA
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
4.0mA
T
C
=25C
Collector to emitter voltage V
CE
(V)
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=40
T
C
=100C
25C
–25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=40
T
C
=–25C
25C
100C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=2V
T
C
=100C
25C
–25C
F
F
0.01
0.1
1
10
0.03
Collector current I
C
(A)
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
=10V
f=10MHz
T
C
=25C
T
T
0.1
Collector to base voltage V
CB
(V)
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
=0
f=1MHz
T
C
=25C
C
o
0
5
4
1
3
2
0.01
0.03
0.1
0.3
1
3
10
30
100
Pulsed t
=1ms
Duty cycle=1%
I
C
/I
B
=40 (I
B1
=–I
B2
)
V
CC
=50V
T
C
=25C
t
stg
t
f
t
on
Collector current I
C
(A)
S
o
,
s
,
f
μ
s
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
Non repetitive pulse
T
C
=25C
I
CP
I
C
10ms
t=1ms
DC
Collector to emitter voltage V
CE
(V)
C
C
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