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參數(shù)資料
| 型號： | 2SD2495 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴散平面達林頓晶體管) |
| 中文描述： | 6 A, 110 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 24K |
| 代理商： | 2SD2495 |
155
Darlington
2S D2495
I
C
–V
CE
Characteristics
(Typical)
1mA
0.5mA
h
FE
–I
C
Characteristics
(Typical)
h
FE
–I
C
Temperature
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
Safe Operating Area
(Single Pulse)
f
T
–I
E
Characteristics
(Typical)
0
0
2
4
6
2
6
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
I
B
=0.1mA
5
0.4mA
0.3mA
0.2mA
0.02
0.1
0.5
1
6
5
Collector Current I
C
(A)
D
F
(V
CE
=4V)
1000
500
200
5000
10000
40000
Typ
0.5
0.3
1
4
1
10
100
1000
5
50
500
Time t(ms)
T
θ
j
(
0
6
4
2
0
2.5
2
1
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
1(a m
2CaTp
–CaTp
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
10ms
100ms
10
50
5
3
100
200
0.05
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
0
3
2
1
0.1
1
0.5
10
5
100
50
Base Current I
B
(mA)
C
C
(
I
C
=5A
I
C
=3A
(V
CE
=4V)
0.02
0.1
5
1
6
0.5
Collector Current I
C
(A)
D
F
1000
500
100
5000
10000
40000
125C
25C
–30C
0
–0.1
–1
–6
40
20
80
60
C
T
(
Z
)
(V
CE
=12V)
Emitter Current I
E
(A)
Typ
Without Heatsink
Natural Cooling
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1626)
Application :
Audio, Series Regulator and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2495
110
110
5
6
1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SD2495
100
max
100
max
110
min
5000
min
2.5
max
3.0
max
60
typ
55
typ
Unit
μ
A
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=110V
V
EB
=5V
I
C
=30mA
V
CE
=4V, I
C
=5A
I
C
=5A, I
B
=5mA
I
C
=5A, I
B
=5mA
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
6
5
R
L
(
)
I
C
(A)
V
(V)
–5
I
(mA)
–5
t
on
(
μ
s)
0.8typ
t
stg
(
μ
s)
6.2typ
t
f
(
μ
s)
1.1typ
I
(mA)
5
V
(V)
10
B
C
E
(70
)
Equivalent circuit
h
FE
Rank
O(5000to12000), P(6500to20000), Y(15000to30000)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD2557 | Silicon NPN Triple Diffused Planar Transistor(Series Regulator and General Purpose) |
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| 2SD2560 | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴散平面達林頓晶體管) |
| 2SD2561 | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴散平面達林頓晶體管) |
| 2SD2562 | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴散平面達林頓晶體管) |
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