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參數(shù)資料
| 型號： | 2SD2575 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency power amplification) |
| 中文描述： | 5000 mA, 10 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92-B1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SD2575 |
1
Transistor
2SD2575
Silicon NPN epitaxial planer type
For low-frequency power amplification
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP*1
I
C
P
C
T
j
T
stg
Ratings
15
10
10
9
5
750
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 5V, I
B
= 0
V
EB
= 5V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*
V
CE
= 2V, I
C
= 2A
*
I
C
= 3A, I
B
= 0.1A
*
V
CB
= 6V, I
E
= –50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
10
10
700
195
typ
0.28
170
45
max
0.1
1.0
0.1
0.5
65
Unit
μ
A
μ
A
μ
A
V
V
V
MHz
pF
*1
Measuring time: t = 380
μ
sec
*
Pulse measurement
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