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參數(shù)資料
| 型號： | 2SD2638 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type |
| 中文描述： | 東芝晶體硅npn型三重擴散梅薩類型 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 139K |
| 代理商： | 2SD2638 |
2SD2638
2001-11-27
1
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SD2638
Horizontal Deflection Output for Color TV, Digital TV.
High Speed Switching Applications.
High voltage: V
CBO
= 1700 V
Low saturation voltage: V
CE (sat)
= 5 V (max)
High speed: t
f
= 0.8 μs (max)
Maximum Ratings
(Tc 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
1700
V
Collector-emitter voltage
V
CEO
750
V
Emitter-base voltage
V
EBO
5
V
DC
I
C
7
Collector current
Pulse
I
CP
14
A
Base current
I
B
3.5
A
Collector power dissipation
P
C
50
W
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
Equivalent Circuit
Electrical Characteristics
(Tc 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
1700 V, I
E
0
1
mA
Emitter cut-off current
I
EBO
V
EB
5 V, I
C
0
66
200
mA
Emitter-base breakdown voltage
V
(BR) EBO
I
E
400 mA, I
C
0
5
V
h
FE
(1)
V
CE
5 V, I
C
1 A
8
25
DC current gain
h
FE
(2)
V
CE
5 V, I
C
5.5 A
4.5
7.5
Collector-emitter saturation voltage
V
CE (sat)
I
C
5.5 A, I
B
1.2 A
5
V
Base-emitter saturation voltage
V
BE (sat)
I
C
5.5 A, I
B
1.2 A
1.0
1.5
V
Forward voltage (damper diode)
V
F
I
F
7 A
1.3
2
V
Transition frequency
f
T
V
CE
10 V, I
C
0.1 A
2
MHz
Collector output capacitance
C
ob
V
CB
10 V, I
E
0, f 1 MHz
125
pF
Storage time
t
stg
7
9
Switching time
Fall time
t
f
I
CP
5.5 A, I
B1 (end)
1.1 A,
f
H
15.75 kHz
0.4
0.8
s
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16E3A
Weight: 5.5 g (typ.)
1. Base
50 (typ.)
3. Emitter
2. Collector
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