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參數(shù)資料
| 型號(hào)： | 2SD2719 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 800 mA, 70 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-3S1C, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 202K |
| 代理商： | 2SD2719 |
2SD2719
2007-06-07
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = 45 V, IE = 0
10
μA
Collector cutoff current
ICEO
VCE = 45 V, IE = 0
10
μA
Emitter cutoff current
IEBO
VEB = 8 V, IC = 0
0.80
4.0
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
60
70
V
DC current gain
hFE
VCE = 2 V, IC = 1 A
2000
VCE (sat) (1) IC = 0.5 A, IB = 1 mA
1.2
V
Collector-emitter saturation voltage
VCE (sat) (2) IC = 1 A, IB = 1 mA
1.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 1 mA
2.0
V
Turn-on time
ton
0.4
Storage time
tstg
4.0
Switching time
Fall time
tf
Duty cycle ≦1%
0.6
μs
Marking
VCC = 30 V
R
L
=30
Ω
Output
Input 20 μs
5V
W V
Lot code (year)
Dot: even year
No dot: odd year
Lot code (month)
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD313G-E-TA3-T | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD313L-C-TF3-T | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD313G-D-TF3-T | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD313G-F-TA3-T | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD313G-C-TF3-T | 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2719(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Darlington Trans.NPN 60V 0.8A hfe2000min |
| 2SD273 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 800V 5A 80W BEC |
| 2SD274 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 800V 5A 80W BEC |
| 2SD299 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANS. TO-3 1500V 5A 16W BEC |
| 2SD30 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SD30 |
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