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參數(shù)資料
| 型號(hào)： | 2SD327 |
| 英文描述： | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 20V的五（巴西）總裁| 500mA的一（c）|至92 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 39K |
| 代理商： | 2SD327 |
2SC1344, 2SC1345
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
2SC1344
2SC1345
Unit
Collector to base voltage
V
CBO
30
55
V
Collector to emitter voltage
V
CEO
30
50
V
Emitter to base voltage
V
EBO
55V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SC1344
2SC1345
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
30
—
55
—
V
I
C = –10 A, IE = 0
Collector to emitter
breakdown voltage
V
(BR)CEO
30
—
50
—
V
I
C = 1 mA, RBE = ∞
Emitter to base
breakdown voltage
V
(BR)EBO
5
—
—5
——
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
—
0.5
AV
CB =18 V, IE = 0
Emitter cutoff current
I
EBO
—
0.5
—
0.5
AV
EB = 2 V, IC = 0
DC current transfer ratio h
FE*
1
250
—
1200
250
—
1200
V
CE = 12 V, IC = 2 mA
Base to emitter voltage
V
BE
—
0.75
—
0.75
V
CE = 12 V, IC = 2 mA
Collector to emitter
saturation voltage
V
CE(sat)
—
0.5
—
0.5
V
I
C = 10 mA, IB = 1 mA
Gain bandwidth product f
T
—
230
—
230
—
MHz
V
CE = 12 V, IC = 2 mA
Collector output
capacitance
Cob
—
3.5
—
3.5
pF
V
CB = 10 V, IE = 0,
f = 1 MHz
Noise figure
NF
—
8
—
8
dB
V
CE = 6 V, IC = 0.1 mA,
f = 10 Hz, R
g = 10 k
——1
—
1
dB
V
CE = 6 V, IC = 0.1 mA,
f = 1 kHz, R
g = 10 k
Note:
1. The 2SC1344 and 2SC1345 are grouped by h
FE as follows.
DE
F
250 to 500
400 to 800
600 to 1200
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