參數(shù)資料
型號(hào): 2SD467
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/6頁
文件大?。?/td> 30K
代理商: 2SD467
2SD467
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
25
V
Collector to emitter voltage
20
V
Emitter to base voltage
5
V
Collector current
0.7
A
Collector peak current
1.0
A
Collector power dissipation
0.5
W
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
h
FE
*
1
1.0
μ
A
V
CB
= 20 V, I
E
= 0
V
= 1 V, I
C
= 0.15 A
(Pulse test)
DC current transfer ratio
85
240
Collector to emitter saturation
voltage
V
CE(sat)
0.19
0.5
V
I
= 0.5 A, I
B
= 0.05 A
(Pulse test)
Base to emitter voltage
V
BE
0.76
1.0
V
V
= 1 V, I
C
= 0.15 A
(Pulse test)
Gain bandwidth product
f
T
280
MHz
V
= 1 V, I
C
= 0.15 A
(Pulse test)
Collector output capacitance
Note:
1. The 2SD467 is grouped by h
FE
as follows.
B
C
Cob
12
pF
V
CB
= 10 V, I
E
= 0, f = 1 MHz
85 to170
120 to 240
相關(guān)PDF資料
PDF描述
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