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參數(shù)資料
| 型號(hào)： | 2SD655F |
| 英文描述： | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 700MA I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 15V的五（巴西）總裁| 700mA的一（c）|至92 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | 2SD655F |
2SD655
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
i
C(peak)
P
C
Tj
30
V
Collector to emitter voltage
15
V
Emitter to base voltage
5
V
Collector current
0.7
A
Collector peak current
1.0
A
Collector power dissipation
500
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
—
V
I
C
= 10
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
15
—
—
V
I
C
= 1 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 10
μ
A, I
C
= 0
Collector cutoff current
I
CBO
V
BE
V
CE(sat)
—
—
1.0
μ
A
V
CB
= 20 V, I
E
= 0
V
CE
= 1 V, I
C
= 150 mA
I
C
= 500 mA, I
B
= 50 mA*
2
Base to emitter voltage
—
—
1.0
V
Collector to emitter saturation
voltage
—
0.15
0.5
V
DC current transfer ratio
h
FE
*
1
f
T
250
—
1200
V
CE
= 1 V, I
C
= 150 mA*
2
V
CE
= 1 V, I
C
= 150 mA
Gain bandwidth product
Notes: 1. The 2SD655 is grouped by h
FE
as follows.
2. Pulse test
D
E
—
250
—
MHz
F
250 to 500
400 to 800
600 to 1200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD655F(TZ-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SD655FTZ-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SD661 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) |
| 2SD661A | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) |
| 2SD662 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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