參數(shù)資料
型號(hào): 2SD662
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon NPN epitaxial planer type(For high breakdown voltage general amplification)
中文描述: 70 mA, 200 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 39K
代理商: 2SD662
2
Transistor
2SD662, 2SD662B
P
C
— Ta
I
C
— V
CE
I
C
— V
BE
I
C
— I
B
V
CE(sat)
— I
C
I
B
— V
BE
h
FE
— I
C
f
T
— I
E
I
CBO
— Ta
0
200
160
40
120
80
0
800
600
200
500
700
400
100
300
Ambient temperature Ta (C)
C
C
0
10
8
2
6
4
0
120
100
80
60
40
20
Ta=25C
I
B
=2.0mA
0.2mA
0.4mA
0.6mA
0.81.11.1.61.8mA
Collector to emitter voltage V
CE
(V)
C
C
0
Base to emitter voltage V
BE
(V)
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE
=10V
Ta=75C
–25C
25C
C
C
0
2.0
1.6
0.4
Base current I
B
(mA)
1.2
0.8
0
120
100
80
60
40
20
V
=10V
Ta=25C
C
C
0.01
0.1
1
10
0.03
Collector current I
C
(mA)
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
25C
–25C
Ta=75C
C
C
0
Base to emitter voltage V
BE
(V)
1.0
0.8
0.2
0.6
0.4
0
3.0
2.5
2.0
1.5
1.0
0.5
V
=10V
Ta=25C
B
B
0.01
0.1
1
10
0.03
Collector current I
C
(mA)
0.3
3
0
360
300
240
180
120
60
V
CE
=10V
Ta=75C
25C
–25C
F
F
–1
–3
–10
–30
–100
0
160
120
40
100
140
80
20
60
V
=10V
Ta=25C
Emitter current I
E
(mA)
T
T
0
200
160
40
120
80
1
10
10
2
10
3
10
4
V
CB
=250V
Ambient temperature Ta (C)
I
C
I
C
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參數(shù)描述
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