參數(shù)資料
型號: 2SD669-X-T92-K
廠商: 友順科技股份有限公司
英文描述: BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
中文描述: 雙極晶體管權(quán)力的一般用途
文件頁數(shù): 3/5頁
文件大?。?/td> 85K
代理商: 2SD669-X-T92-K
2SD669/A
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R204-005,E
ABS OLUT E MAX IMUM RAT ING
(
Ta=
25
,
unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
RATINGS
180
120
160
5
1.5
3
0.5
1
+150
-40 ~ +150
UNIT
V
Collector-Base Voltage
2SD669
2SD669A
Collector-Emitter Voltage
V
CEO
V
Emitter-Base Voltage
Collector Current
Collector Peak Current
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
V
EBO
I
C
l
C(PEAK)
V
A
A
W
W
SOT-223
TO-126
P
D
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
TEST CONDITIONS
I
C
=1mA, I
E
=0
MIN
180
120
160
5
60
30
TYP
140
14
MAX
10
320
1
1.5
UNIT
V
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-off Current
2SD669
2SD669A
BV
CEO
I
C
=10mA, R
BE
=
V
BV
EBO
I
CBO
h
FE1
h
FE2
V
CE(SAT)
I
C
=600mA, I
B
=50mA (Note)
V
BE
V
CE
=5V, I
C
=150mA (Note)
f
T
V
CE
=5V, I
C
=150mA (Note)
C
ob
V
CB
=10V, I
E
=0, f=1MHz
I
E
=1mA, I
C
=0
V
CB
=160V, I
E
=0
V
CE
=5V, I
C
=150mA (Note)
V
CE
=5V, I
C
=500mA (Note)
V
μ
A
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test.
V
V
MHz
pF
CLAS S IFICAT ION OF h
FE1
RANK
RANGE
B
C
D
60-120
100-200
160-320
相關(guān)PDF資料
PDF描述
2SD669-X-T9N-B BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669-X-T9N-K BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669-X-T9N-R BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669-X-TM3-T BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669-X-TN3-R BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
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