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參數(shù)資料
| 型號： | 2SD669-X-TN3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 中文描述： | 雙極晶體管權力的一般用途 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 85K |
| 代理商： | 2SD669-X-TN3-T |
2SD669/A
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R204-005,E
ABS OLUT E MAX IMUM RAT ING
(
Ta=
25
,
unless otherwise specified)
PARAMETER
SYMBOL
V
CBO
RATINGS
180
120
160
5
1.5
3
0.5
1
+150
-40 ~ +150
UNIT
V
Collector-Base Voltage
2SD669
2SD669A
Collector-Emitter Voltage
V
CEO
V
Emitter-Base Voltage
Collector Current
Collector Peak Current
Collector Power Dissipation
Collector Power Dissipation
Junction Temperature
Storage Temperature
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
V
EBO
I
C
l
C(PEAK)
V
A
A
W
W
SOT-223
TO-126
P
D
T
J
T
STG
ELECT RICAL CHARACT ERIS T ICS
(Ta=25
, unless otherwise specified)
PARAMETER
SYMBOL
BV
CBO
TEST CONDITIONS
I
C
=1mA, I
E
=0
MIN
180
120
160
5
60
30
TYP
140
14
MAX
10
320
1
1.5
UNIT
V
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown Voltage
Collector Cut-off Current
2SD669
2SD669A
BV
CEO
I
C
=10mA, R
BE
=
∞
V
BV
EBO
I
CBO
h
FE1
h
FE2
V
CE(SAT)
I
C
=600mA, I
B
=50mA (Note)
V
BE
V
CE
=5V, I
C
=150mA (Note)
f
T
V
CE
=5V, I
C
=150mA (Note)
C
ob
V
CB
=10V, I
E
=0, f=1MHz
I
E
=1mA, I
C
=0
V
CB
=160V, I
E
=0
V
CE
=5V, I
C
=150mA (Note)
V
CE
=5V, I
C
=500mA (Note)
V
μ
A
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test.
V
V
MHz
pF
CLAS S IFICAT ION OF h
FE1
RANK
RANGE
B
C
D
60-120
100-200
160-320
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|---|---|
| 2SD669L-X-T60-K | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669L-X-T6C-R | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669L-X-T92-B | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669L-X-T92-K | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
| 2SD669L-X-T9N-B | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD67 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 120V 5A 50W BEC |
| 2SD670 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 15A 100W BEC |
| 2SD670H | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 100V 15A 100W BEC |
| 2SD672 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-3 300V 1A 40W BEC |
| 2SD673 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistors |
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