參數(shù)資料
型號(hào): 2SD669L-X-T60-K
廠商: 友順科技股份有限公司
英文描述: BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
中文描述: 雙極晶體管權(quán)力的一般用途
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 85K
代理商: 2SD669L-X-T60-K
2SD669/A
NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R204-005,E
T Y PICAL CHARACT ERIS T ICS
DC Current Transfer Ratio
vs. Collector Current
Ta=75
25
-20
V
CE
=5V
1
50
100
150
200
250
300
1
3
10
30
100 300 1,0003,000
Collector Current, I
C
(mA)
D
F
Collector to Emitter Saturation Voltage
vs. Collector Current
1
3
10
30
100
300
1,000
Collector Current, I
C
(mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
C
v
C
T
C
=75
I
C
=10 I
B
25
-20
T
C
=-20
25
75
I
C
=10I
B
1
3
10
30
100 300 1,000
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current, I
C
(mA)
Base to Emitter Saturation Voltage
vs. Collector Current
B
V
B
10
30
Collector Current, I
C
(mA)
100
300
1,000
0
40
80
120
160
200
240
G
T
(
Gain Bandwidth Product
vs. Collector Current
V
CE
=5V
Ta=25
1
5
10
50
20
100
2
2
5
10
20
50
100
200
Collector to Base Voltage, V
CB
(V)
Collector Output Capacitance
vs. Collector to Base Voltage
C
o
(
f=1MHz
I
E
=0
DC Operation (T
C
=25
)
(13.3V, 1.5A)
40V, 0.5A
2SD669A
(120V, 0.04A)
(160V, 0.02A)
2SD669
Area of Safe Operation
Collector to Emitter Voltage, V
CE
(V)
1
3
10
100
300
0.01
0.03
0.1
0.3
1.0
3
30
C
C
相關(guān)PDF資料
PDF描述
2SD669L-X-T6C-R BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
2SD669L-X-T92-B BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
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