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參數(shù)資料
| 型號(hào)： | 2SD970K |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | RES,ZERO OHM,2.5A,1/4W,AXL |
| 中文描述： | 硅npn型三重?cái)U(kuò)散 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 37K |
| 代理商： | 2SD970K |
2SD970(K)
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
120
—
—
V
I
C
= 25 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
7
—
—
V
I
E
= 50 mA, I
C
= 0
Collector cutoff current
I
CBO
I
CEO
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
t
on
t
stg
t
f
—
—
100
μ
A
μ
A
V
CB
= 120 V, I
E
= 0
V
CE
= 100 V, R
BE
=
∞
V
CE
= 3 V, I
C
= 4 A*
1
I
C
= 4 A, I
B
= 8 mA*
1
I
C
= 8 A, I
B
= 80 mA*
1
I
C
= 4 A, I
B
= 8 mA*
1
I
C
= 8 A, I
B
= 80 mA*
1
I
C
= 4 A, I
B1
= –I
B2
= 8 mA
—
—
10
DC current transfer ratio
1000
—
20000
Collector to emitter saturation
—
—
1.5
V
voltage
—
—
3.0
V
Base to emitter saturation
—
—
2.0
V
voltage
—
—
3.5
V
Turn on time
—
0.4
—
μ
s
μ
s
μ
s
Storage time
—
5.4
—
Fall time
Note:
—
1.1
—
1. Pulse test.
0
50
100
150
Case temperature T
C
(
°
C)
C
Maximum Collector Dissipation Curve
20
40
60
0.03
0.1
0.3
1.0
3
10
30
Collector to emitter voltage V
CE
(V)
C
C
1
3
10
30
100
300
1,000
Area of Safe Operation
1
μ
s
10
μ
s
1m
D prto T
C
5
°
C
1 shot pulse
i
C
(peak)
I
(Continuous)
Ta = 25
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD970K(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SD971 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR MT-25300V 6A 50W BCE |
| 2SD972 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANKEN TRANS. MT-25 50V 4A 30W BCE |
| 2SD973 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD973A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR M-TYPE 60V 1A 1W BCE |
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