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參數(shù)資料
| 型號： | 2SD975 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 31K |
| 代理商： | 2SD975 |
2SD975
2
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
150
—
—
V
I
C
= 1 mA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
60
—
—
V
I
C
= 10 mA, R
BE
=
∞
Emitter to base breakdown
voltage
V
(BR)EBO
5
—
—
V
I
E
= 1 mA, I
C
= 0
Collector cutoff current
I
CBO
h
FE
V
CE(sat)
—
—
1.0
μ
A
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V, I
C
= 1.5 A*
1
I
C
= 1.5 A, I
B
= 0.05 A*
1
DC current transfer ratio
150
—
—
Collector to emitter saturation
voltage
—
—
0.5
V
Base to emitter saturation
voltage
V
BE(sat)
—
—
1.3
V
Fall time
Note:
t
f
—
—
0.6
μ
s
I
C
= 1.5 A, I
B1
= –I
B2
= 50 mA
1. Pulse test.
Maximum Collector Dissipation
Curve
1.2
0.8
0.4
0
50
100
150
Ambient temperature Ta (
°
C)
C
C
Area of Safe Operation
6
5
4
3
2
1
0
50
100
150
C
C
Collector to emitter voltage V
CE
(V)
(60 V, 0.5 A)
1
(20 V, 5 A)
T
C
= 25
°
C
f = 15.75 kHz
F cr
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