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參數(shù)資料
| 型號(hào)： | 2SH21 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel IGBT |
| 中文描述： | 硅N溝道IGBT的 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SH21 |
500
400
300
200
100
0
40
80
120
160
200
Gate Charge Qg (nc)
C
C
20
16
12
8
4
0
G
G
V = 400 V
300 V
200 V
V = 400 V
300 V
200 V
V
CE
V
GE
I = 50 A
C
Dynamic Input Chracteristics
1000
S
100
200
500
50
20
2000
5
10
50
100
500
I = 50 A
R =6 (V = 300 V)
V = ±15 V
Tc = 25 °C
tdon
tr
td(off)
tf
Gate Resistance Rg ( )
Switching Characteristics
1000
500
200
100
50
5000
2000
–25
0
25
50
75
100
125
td(off)
td(on)
tr
tf
V = ±15 V, Rg = 50
I = 50 A, R = 6
Case Temperature Tc (°C)
S
Switching Characteristics
1000
S
100
200
500
50
20
2000
100
1
5
10
50
V = 300 V
V = ±15 V
Rg = 50
Tc = 25 °C
td(on)
tr
td(off)
tf
Collector Current I (A)
Switching Characteristics
5
2SH21
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SH22 | Silicon N-Channel IGBT |
| 2SH26 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH27 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | Silicon N Channel IGBT High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SH22 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel IGBT |
| 2SH26 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH27 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
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