參數(shù)資料
型號: 2SH22
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel IGBT
中文描述: 硅N溝道IGBT的
文件頁數(shù): 6/8頁
文件大?。?/td> 42K
代理商: 2SH22
Ic Monitor
Vin Monitor
D.U.T.
Rg
Vin ± 15 V
R
L
V
CC
10%
tf
tr
td(off)
td(on)
Ic
Vin
0
90%
90%
90%
10%
10%
V
CE
ton
toff
V
Monitor
CE
Waveforms
Switching Time Test Circuit
3
1
0.3
0.1
0.03
0.01
10 μ
100 μ
1 m
10 m
Pulse Width PW (S)
N
100 m
1
10
s
γ
DM
P
PW
T
D =T
j – c = 0.625 °C/W, Tc = 25 °C
θ γ θ
θ
0.05
D = 1
0.5
0.2
0.1
1 shot puse
0.01
0.02
Normalized Transient Thermal Impedance vs. Pulse Width
6
2SH22
相關(guān)PDF資料
PDF描述
2SH26 Silicon N Channel IGBT High Speed Power Switching
2SH27 Silicon N Channel IGBT High Speed Power Switching
2SH28 Silicon N Channel IGBT High Speed Power Switching
2SH29 Silicon N Channel IGBT High Speed Power Switching
2SH30 Silicon N Channel IGBT High Speed Power Switching
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SH26 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching
2SH27 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching
2SH28 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching
2SH29 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching
2SH30 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching