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參數(shù)資料
| 型號： | 2SH26 |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 191K |
| 代理商： | 2SH26 |
2SH26
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to Emitter voltage
V
CES
600
V
Gate to Emitter voltage
V
GES
±20
V
Collector current
I
C
10
A
Collector peak current
ic(peak)
20
A
Collector dissipation
P
C
Note1
50
W
Channel temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at Tc = 25
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector
current
I
CES
—
100
AV
CE = 600V, VGE = 0
Gate to emitter leak current
I
GES
——
±1
AV
GE = ± 20 V, VCE = 0
Gate to emitter cutoff voltage
V
GE(off)
6.0
—
8.0
V
I
C = 10mA, VCE = 10V
Collector to emitter saturation
voltage
V
CE(sat)
—
2.1
2.6
V
I
C = 10A, VGE = 15V
Input capacitance
Cies
—
620
—
pF
V
CE = 10V,
V
GE = 0
f = 1MHz
Switching time
t
r
—
140
—
ns
I
C = 10A
t
on
—
215
—
ns
R
L = 30
t
f
—
300
600
ns
V
GS = ±15V
t
off
—
380
760
ns
Rg = 50
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SH27 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH28 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH29 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH30 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
| 2SH31 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel IGBT High Speed Power Switching |
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