- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370095 > 2SH31 (Hitachi,Ltd.) Silicon N Channel IGBT High Speed Power Switching PDF資料下載
參數(shù)資料
| 型號： | 2SH31 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel IGBT High Speed Power Switching |
| 中文描述： | 硅?通道高速IGBT的功率開關(guān) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SH31 |
2SH31
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Collector to Emitter voltage
V
CES
V
GES
I
C
ic(peak)
600
V
Gate to Emitter voltage
±
20
V
Collector current
75
A
Collector peak current
150
A
Collector dissipation
P
C
Tj
Note1
150
W
Channel temperature
150
°
C
°
C
Storage temperature
Note:
1. Value at Tc = 25
°
C
Tstg
55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage collector
current
I
CES
100
μ
A
V
CE
= 600V, V
GE
= 0
Gate to emitter leak current
I
GES
V
GE(off)
V
CE(sat)
±
1
μ
A
V
GE
=
±
20 V, V
CE
= 0
I
C
= 75mA, V
CE
= 10V
I
C
= 75A, V
GE
= 15V
Gate to emitter cutoff voltage
6.0
8.0
V
Collector to emitter saturation
voltage
2.1
2.6
V
Input capacitance
Cies
4100
pF
V
= 10V, V
GE
= 0
f = 1MHz
Switching time
t
r
t
on
t
f
t
off
400
ns
I
C
= 75A
R
L
= 4
V
GS
=
±
15V
Rg = 50
600
ns
300
600
ns
800
1600
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ113 | SILICON P-CHANNEL MOS FET |
| 2SJ116 | SILICON P-CHANNEL MOS FET |
| 2SJ117 | Silicon P-Channel MOS FET |
| 2SJ130 | Silicon P Channel MOS FET(P溝道MOSFET) |
| 2SJ130L | Silicon P Channel MOS FET(P溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SHA04IDC | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:HEADER & HOUSING SYSTEMS |
| 2SHA04TR | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:HEADER & HOUSING SYSTEMS |
| 2SHA04TS | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:HEADER & HOUSING SYSTEMS |
| 2SHA05IDC | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:HEADER & HOUSING SYSTEMS |
| 2SHA05TR | 制造商:ADAM-TECH 制造商全稱:Adam Technologies, Inc. 功能描述:HEADER & HOUSING SYSTEMS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。