參數(shù)資料
型號: 2SJ105
元件分類: 小信號晶體管
英文描述: P-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: 2-4E1B, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 0K
代理商: 2SJ105
2SK2341
4
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
ID - Drain Current - A
yfs
-
Forward
Transfer
Admittance
-
S
VGS - Gate to Source Voltage - V
R
DS
(on)
-Drain
to
Source
On-State
Resistance
-
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
Tch - Channel Temperature - °C
V
GS
(off)
-Gate
to
Source
Cutoff
Voltage
-
V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
ID - Drain Current - A
R
DS
(on)
-
Drain
to
Source
On-State
Resistance
-
–50
0
50
100
150
5.0
4.0
3.0
2.0
1.0
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
th
(ch-c)
(t)
(°C/W)
10
100
1 m
10 m
100 m
1
10
100
1000
100
10
1
0.1
0.01
0.001
TC = 25 °C
Single Pulsed
Rth (ch-c) = 3.57 °C/W
Rth (ch-a) = 62.5 °C/W
10
0.1
1.0
10
100
TA = –25 °C
25 °C
75 °C
125 °C
VDS = 10 V
Pulsed
20
30
0
10
2.0
1.0
Pulsed
ID = 16 A
8.0 A
3.2 A
1.5
0.5
1.0
0
0.1
10
100
1.0
VGS = 10 V
Pulsed
VDS = 10 V
ID = 1 mA
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